PART |
Description |
Maker |
K7B321825M K7B323625M K7B323625M-QC6575 |
Aluminum Snap-In Capacitor; Capacitance: 820uF; Voltage: 250V; Case Size: 22x50 mm; Packaging: Bulk 1Mx36 & 2Mx18 Synchronous SRAM 1Mx36 & 2Mx18 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K7R161884B K7R161884B-FC16 K7R161884B-FC20 K7R1618 |
512Kx36 & 1Mx18 QDR II b4 SRAM 512Kx36 512Kx36 & 1Mx18 QDR II b4 SRAM 1Mx36 & 2Mx18 & 4Mx9 QDRTM II b2 SRAM
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K7D321874C K7D323674C |
1Mx36 & 2Mx18 SRAM
|
Samsung semiconductor
|
K7B323625M K7A321800M-QC14 K7B323625M-QC6575 K7A32 |
1Mx36 & 2Mx18 Synchronous SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K7R320982C K7R323682C-FEC30 K7R321882C K7R323682C |
1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM
|
SAMSUNG[Samsung semiconductor]
|
K7J323682M K7J321882M |
1Mx36 & 2Mx18 DDR II SIO b2 SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
K7R323684C K7R320984C K7R321884C |
1Mx36, 2Mx18 & 4Mx9 QDR II b4 SRAM
|
Samsung semiconductor
|
IS61DDPB42M18A IS61DDPB42M18A/A1/A2 IS61DDPB41M36A |
2Mx18, 1Mx36 36Mb DDR-IIP(Burst 4) CIO SYNCHRONOUS SRAM
|
Integrated Silicon Solution, Inc
|
K7N321831C K7N323631C-QI160 K7N323631C-EC160 K7N32 |
1Mx36 & 2Mx18 Pipelined NtRAM 1M X 36 ZBT SRAM, 3.5 ns, PQFP100 1M X 36 ZBT SRAM, 3.5 ns, PBGA165 1M X 36 ZBT SRAM, 2.6 ns, PQFP100
|
Samsung semiconductor
|
IS61QDPB41M36A2 |
1Mx36 and 2Mx18 configuration available
|
Integrated Silicon Solu...
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